Suppressing Base Currents in Organic Permeable-Base Transistors by Anodization of the Base Electrode

Organic permeable base transistors (OPBTs) have long been investigated as an alternative to conventional OFETs. Their vertical architecture allows for simple low-resolution fabrication techniques, leading to short channel lengths and high current densities. However, to achieve a higher amplification in these transistors, it is essential to keep the base current a few orders of magnitude lower than the collector current. Here, it is shown that electrochemically growing a thin oxide layer on top of the base electrode of OPBT in conjunction with a self-assembled monolayer (SAMs) is capable of suppressing the base current and obtaining a higher amplification value.