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0.2-mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation
0.2-mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation
2013
Dong Xu
Kanin Chu
Jose Diaz
Wenhua Zhu
Richard Roy
Louis Pleasant
K. Nichols
Pane Chane Chao
Xianfan Xu
Peide D. Ye
Keywords:
Chemistry
Analytical chemistry
Electronic engineering
Electron mobility
Passivation
Transistor
RF power amplifier
Atomic layer deposition
high electron
algan gan
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