p-Type Sb-Doped ZnO Thin Films Prepared by Metallorganic Chemical Vapor Deposition Using Metallorganic Dopant

Reproducible p-type Sb-doped ZnO thin films were fabricated on c-plane sapphire substrates by the metallorganic chemical vapor deposition (MOCVD) technique using trimethylantimony as the doping precursor. Sb was introduced into ZnO thin films as a p-type dopant without any phase separation. Obvious donor-acceptor pair emissions were observed from photoluminescence spectra of ZnO:Sb films at 10 K. The acceptor binding energy is estimated to be ∼ 124 meV. Using the metallorganic source as the dopant of p-type ZnO thin films by the MOCVD technique is beneficial for the industrialized production of ZnO light-emitting diodes.