Gaussian distribution model for gate-to-channel capacitance for carbon nanotube field-effect transistor

ABSTRACTIn this paper, a carbon nanotube (CNT) field-effect transistor gate-to-channel capacitance Gaussian distribution model is proposed. The proposed model is based on the assumption of random placement of CNTs within the channel region, in lieu of the traditional uniform distribution exhibited in the literature. The proposed model is inspired from the fact that the nanotubes in the central region along the channel that are more closely packed together yield a lower capacitance value over those that are widely spaced towards the edges. The Gaussian model as presented in this paper offers more accuracy to simulation results, where simulation results reveal that this model provides more practical answers for gate-to-channel capacitance, with higher percentages of improvement regarding energy consumption by the transistor. Moreover, the effects of several parameters such as type of material, tube diameter and the tube–gate distance have been evaluated using the proposed model.