Gamma radiation effect on physical properties of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetrone films

Abstract Thermal evaporating technique was used to prepare 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetrone (Ch-diisoQ) thin films. The studied films were irradiated with gamma rays in the air at room temperature with different absorbed doses (50–200 kGy). X-Ray diffraction was used to comprehend the structure of Ch-diisoQ thin films. The outcomes affirmed that Ch-diisoQ films have nanostructure nature. The optical parameters were obtained by using spectrophotometric measurements. It was found that the dispersion of the refractive index follows the trend of single oscillator model. The optical dispersion parameters of Ch-diisoQ thin films such as dispersion energy, oscillator energy were investigated. The nonlinear susceptibility values of Ch-diisoQ films at different gamma radiation dose were calculated. Furthermore, the investigation of the optical absorption mechanism verified that the value of fundamental band gap energy, E g2 , increased when Ch-diisoQ films were exposed to gamma radiation. However, the conductivity was observed to be increased as the gamma radiation dose increased, while the activation energy of Ch-diisoQ films decreased with the increasing of gamma radiation dose.