About one problem of the identification of parameters direct gap semiconductors on dependencies of the intensities of monochromatic cathodoluminescence from electron beam energy

The problem of identification of parameters direct gap semiconductors is considered at use of dependence of intensity monochromatic cathodoluminescence from electron beam energy and realization of low level of excitation of a signal. It is shown, that realization of a method of the least squares leads to system of the nonlinear algebraic equations which decision essentially depends on a choice of initial approach. Taking into account it some conditions of correct processing of experimental data for identification of required parameters of semiconductors are defined.