Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell

We have developed an approach to control the carrier density in various materials under high pressure by the combination of an electric double layer transistor (EDLT) and a diamond anvil cell (DAC). In this study, this “EDLT-DAC” was applied to a Bi thin film, and here, we report the field effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity.