Si/SiGe resonant-cavity photodiodes for optical storage applications
1998
We report on a resonant cavity photodiode with a Si/SiGe Bragg mirror grown by low temperature chemical vapor deposition suitable for short wavelength detection around 600–700 nm. The presence of Fabry-Perot oscillations in the spectral response of the photodiode are indicative of its wavelength selectivity.
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