Component with a multiple quantum well structure

The invention relates to a component (10) with a semiconductor layer sequence comprising a p-type semiconductor layer (1), an n-type semiconductor layer (2) and an active zone (3) arranged between the p-type semiconductor layer and the n-type semiconductor layer. wherein the active region has a multiple quantum well structure, from the p-type semiconductor layer to the n-type semiconductor layer, a plurality of p-side barrier layers (32p) having quantum well layers (31) therebetween and a plurality of n-side barrier layers (32n) having intervening quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-type semiconductor layer, wherein the quantum well layers and / or the n- and p-side barrier layers extend at least partially in conformity with the flanks of the depressions. The n-side barrier layers have a greater average layer thickness than the p-side barrier layers.