A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

In this paper, a novel laterally coupled p-GaN gate (LCPG) structure have been implemented by the selectively hydrogen plasma treatment to fabricate GaN-on-Si HEMTs with a high breakdown voltage (BV) and a low ON-resistance $(R_{\text{ON}})$ . Due to the coupled effect inside the LCPG, the 2DEG under the gate structure is depleted. The effect of different p-GaN to drain spacing $(L_{\mathrm{p}-\mathrm{D}})$ on device performance is studied.