MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs

InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 /spl Aring/ and doped at 4/spl times/10/sup 19/ cm/sup -3/ were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts.