L‐valley electrons in SiGe heterostructures: highly anisotropic and tunable Zeeman and Rashba‐like spin splittings

We have conducted a detailed and systematic analysis of Zeeman and Rashba‐like (structure‐asymmetry‐induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.