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11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology
2017
Yamashita Ryuji
Magia Sagar
Higuchi Tsutomu
Yoneya Kazuhide
Yamamura Toshio
Mizukoshi Hiroyuki
Zaitsu Shingo
Yamashita Minoru
Toyama Shunichi
Kamae Norihiro
Lee Juan
Chen Shuo
Tao Jiawei
Mak William
Zhang Xiaohua
Yu Ying
Utsunomiya Yuko
Kato Yosuke
Sakai Manabu
Matsumoto Masahide
Chibvongodze Hardwell
Ookuma Naoki
Yabe Hiroki
Taigor Subodh
Samineni Rangarao
Kodama Takuyo
Kamata Yoshihiko
Namai Yuzuru
Huynh Jonathan
Wang Sung-En
He Yankang
Pham Trung
Saraf Vivek
Petkar Akshay
Watanabe Mitsuyuki
Hayashi Koichiro
Swarnkar Prashant
Miwa Hitoshi
Pradhan Aditya
Dey Sulagna
Dwibedy Debasish
Xavier Thushara
Balaga Muralikrishna
Agarwal Samiksha
Kulkarni Swaroop
Papasaheb Zameer
Deora Sahil
Hong Patrick
Wei Meiling
Balakrishnan Gopinath
Ariki Takuya
Verma Kapil
Siau Chang
Dong Yingda
Lu Ching-Huang
Miwa Toru
Moogat Farookh
Keywords:
Computer hardware
Computer science
Layer (object-oriented design)
Line (text file)
Flash memory
Word (computer architecture)
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