A review on GeTe thin film-based phase-change materials

Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage devices. GeTe is one of the best candidates for non-volatile memory technologies because of its high speed, low power consumption, scalability, data retention, and storage capacity. In this review, we discuss the developments in GeTe PCM, and their working and effect of interface and doping to upgrade their performance for various technological applications.