Gate and drain low frequency noise in HfO2 NMOSFETs

Gate and drain current noise investigations are performed on nMOS transistors with HfO2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density Nt(EF) ranging from 3 to 7 1019 eV−1 cm−3. These values are about 50 times higher than for SiO2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter KGC is about 2 10−17 m2, whereas, for SiO2 dielectrics this gate noise figure of merit is about 10−19 m2.