Liquid Precursors for MOCVD Method to Fabricate (RE)BCO thin Films

Low melting point rare earth (RE) elements (samarium, gadolinium and ytterbium) complexes were newly synthesized for fabricating (RE)BCO thin films by an MOCVD method; tris(2,2,6,6-tetramethyl-3,5-octanedionato)samarium(SGd(TMOD)3, and Yb(TMOD)3. The melting point of Sm(TMOD)3, 114 °C, Gd(IMOD)3, 105 °C, and Yb(TMOD)3,99 °C, is 70–90 °C lower than that of the conventional tris(dipivaloylmethanato)RE (RE(DPM)3). The RE oxide thin films could be fabricated by MOCVD using the TMOD complexes as a precursor and a SmBCO thin film could be also fabricated using Sm(TMOD3, the mixture of Ba(DPM)2 and Ba(TMOD)2 and bis(6-ethyl-2,2-Klimethyl-3,5-octanedionato) copper (Cu(EDMOD)2) in the liquid state as precursors.