Surface conduction in InAs and GaSb

This work presents a fundamental investigation of the surface conduction pathways occurring along etched sidewalls in devices fabricated from InAs and GaSb. Surface leakage currents are identified by their dependence on device size and thermal activation energy, and are characterized in terms of sheet conductance. InAs is found to have a temperature-independent sheet conductance of approximately 8×10 -8 mho×square. The sheet conductance of GaSb is comparable to that of InAs at room temperature, and when cooled it decreases with a thermal activation energy of 75 meV, which is approximately equal to the known separation between the valence band and surface Fermi level. The temperature dependence of the surface conductance of the two materials indicates that the surface of InAs is degenerate and the surface of GaSb is non-degenerate.