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Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate
Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate
2019
Takashi Nishitani
R. Yamaguchi
Joel T. Asubar
Hirokuni Tokuda
Masaaki Kuzuhara
Keywords:
characterization
Field (physics)
Materials science
Optoelectronics
Breakdown voltage
algan gan
Correction
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