Modeling of SiC MOSFET for Power Electronics Converters Simulation

The world’s energy needs are constantly rising, this growing progression and the problem of greenhouse gas emissions require a massive integration of clean energy sources. Evidently, this integration passes through a power and energy conversion process, which is obtained by a power conditioning system (PCS) and permits to adapt the characteristics of voltage to the needs of the load. A PCS, based on power electronics converters, can be composed of several conversion stages and its energy efficiency mainly depends on the number of electronic switches and their conduction and switching losses. Lately, Silicon Carbide (SiC) technology has been introduced as a promising way for power losses reduction in power electronics applications. This technology offers several advantages compared to classic Si-MOSFET and IGBT static switches. Power losses modeling is very important in design and development of power converters like buck and boost choppers, and inverters. This paper presents the development and implementation of a SiC MOSFET model which has been employed to simulate a boost dc/dc converter and to compare the SiC device with a classic IGBT working in the same application. The investigated model well reproduces the static and the dynamic behavior of this new technology of static switches and can be used in the simulation of other topologies of power electronics converters for different applications.