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Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
2021
Raphael Böckle
Masiar Sistani
Kilian Eysin
Maximilian G. Bartmann
Minh Anh Luong
Martien Den Hertog
Alois Lugstein
Walter M. Weber
Keywords:
Materials science
Optoelectronics
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