Enhanced photoelectrochemical performance by doping Mo into BiVO 4 lattice

The Mo-doped BiVO4 (m-BiVO4) thin films were deposited onto transparent conducting substrates via a facile metallic organic deposition method. The effect of nominal Mo doping contents on the photoelectrochemical (PEC) performance was investigated. By terms of the electrochemical impedance spectra and Mott–Schottky results, the best PEC performance appeared in the 5 and 10 at% Mo-doped BiVO4 samples was attributed to a lowering of charge transfer resistance occurred at the electrode/electrolyte interface. Moreover, a self-powered Mo:BiVO4 PEC biosensor was fabricated for detecting the glutathione (GSH), which demonstrated a rapid response, a wide detection range 5–1000 µmol/L (µM), a ultralow detect limit of 59 nM, and a sensitivity of 835 A/cm2/mM−1.