Silicon nitride waveguide with flattened chromatic dispersion

Dispersion engineering in integrated silicon nitride waveguides is numerically and experimentally investigated. We show that by modifying the transversal dimensions of the silicon nitride core, it is possible to have a good control of the chromatic dispersion. The inaccuracies due to typical fabrication process in PECD-Si X N Y films shows that the dispersion uncertainty is in the order of 20 ps/nm-km at 1550 nm. Silicon nitride waveguides were then fabricated using the same PECVD process and the chromatic dispersion was measured using a low-coherence frequency domain interferometry technique. A comparison between measurements and simulations shows good agreement.