Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature

Abstract In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n -Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/ n -Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage ( I-V ) and capacity-voltage ( C-V ) measurements of Ni/Crystal Violet/ n -Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φ b ) and series resistance (Rs) of Ni/Crystal Violet/ n -Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature.