Detailed Modeling Recombination in PID-affected N-type Mono-crystalline Silicon Solar Module

In this paper, the double-diode equivalent model of solar oell is used to analyze the recombination occurring in p-type mono-crystalline silicon solar module affected by potential-induced degradation (PID). By comparison with the measured data and EL images, it reveals that more recombination current (${I}_{d2}$) is generated in solar module undergoing PID stress. The variation of ${I}_{d2}/{I}_{d1}$ shows that recombination current plays a main role in output current of solar module under low voltage. What’s worse, the value of ${I}_{d2}/{I}_{d1}$ becomes larger after PID stress. These results indicate that the p-n junction may be destroyed by PID.