A 110–170-GHz Non-Galvanic Interface for Integrating Silicon Micromachined Chips With Metallic Waveguide Systems

We report on the development of a non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at $D$ -band (110–170 GHz). This transition overcomes the limitations of current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition uses an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good agreement with simulation. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the $D$ -band. Measurement of multiple samples and repeated assemblies results in a variation of S21 of less than ±0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications.