Using 3D Monte Carlo simulation to develop resists for next-generation lithography

This paper investigates the ability of a novel and bespoke Monte Carlo simulation to model the experimental outcome of exposure of resist materials by electron beam. The resists are a family of organo-metallic Chromium rings (Cr 8 F 8 (O 2 CtBu) 16 ), which have high resolution and low LER making them ideal candidates for the fabrication of the next generation of photomasks for EUV lithography. The model shows how the electron scattering in the resist material and the subsequent production of secondary electrons lead to the resists high resolution. The resist family can be modified to increase speed by up 17.3 times, by replacing the pivalate ligand with a methacrylate ligand, whilst still maintaining their desirable properties.