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Precisely Located Si Vacancies in 4H-SiC Generated via Focused Li-ion Beam for Quantum Information Science Applications
Precisely Located Si Vacancies in 4H-SiC Generated via Focused Li-ion Beam for Quantum Information Science Applications
2019
Shojan P. Pavunny
Edward Bielejec
Samuel Carter
Hunter Banks
Rachael L. Myers-Ward
Paul B. Klein
Matthew T. Dejarld
Allan Bracker
Evan R. Glaser
David Kurt Gaskill
Keywords:
Quantum information science
Materials science
Ion beam
Optoelectronics
Correction
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