Comparative analysis of contact resistance of carbon nanotubes field-effect transistors

Contact resistance is an important parameter to evaluate the feasibility of carbon nanotubes (CNT) field-effect transistors (FETs) in high performance logic applications. In this paper we make the systematic study of contact resistance of solution-processed CNT-FETs by transmission line method (TLM) and the Y-function method (YFM). TLM needs to calculate the voltage between source and drain electrodes of a group of devices with different channel length, but YLM only needs the transfer characteristic curve of a single device. The results by our calculation indicate that, the resistance obtained by YFM is larger than that obtained by TLM, which provides reference value for the selection of methods to find contact resistance in the future.