High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors

Tolerance of AlInSb/InAsSb/AlInSb heterostructures quantum-well-based micro-Hall sensors against proton irradiation of 380 keV and proton fluence in the range \(10^{11}\) and \(10^{16}\) (proton/cm 2 ) is reported. Defects and deep levels induced by proton irradiation into the heterostructures caused decreases in the mobility of the micro-Hall sensors. Degradation of the magnetic sensitivity started at a proton fluence of \(10^{13}\) (proton/cm 2 ) and continued with increasing proton fluence. The variation of the micro-Hall sensors sensitivity was minimal in low-doped AlInSb/InAsSb/AlInSb heterostructure quantum wells. These micro-Hall sensors were operable even at proton fluence of \(10^{16}\) (proton/cm 2 ), which makes these devices suitable for space applications with lifetime of thousands of years in the outer space.