Temperature Facilitated ECR-Etching for Isotropic SiC Structuring

In order to realize complex three dimensional or free standing structures on SiC substrates, an undercut, i.e. a selective isotropic etching process of SiC, is required. This was realized using an electron cyclotron resonance etching set up with pure SF6 and a SF6/Ar gas composition at elevated substrate temperatures. Above 350°C a significant lateral etch component was observed, which rose to a value of 50-70 nm/min increasing the substrate temperature up to 570°C during the etching process. Depending on substrate temperature the etching profiles and surface roughness were studied. Based on an analysis of the influence of microwave power, working pressure, bias voltage, gas flow and gas mixture on the etching behavior a novel isotropic, high selective, residue free etch process for SiC was developed, which allows for example the fabrication of piezoelectric actuated AlGaN/GaN resonators grown on SiC substrates.