Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p -Type Doping Buried Layer for Current Confinement

p- and n- layers in GaAs by dual implants with either Ge and Ga or Ge and As into GaAs have been produced. The amphoteric behavior of Ge implants is modified in a predictable manner through control of ion dose and annealing temperature by dual implantation. The (Ge+Ga) dual implants have produced p-type conductivity for all doses up to an anneal temperature of 900 DEG C. The (Ge+As) dual implants have yielded a significant enhancement of the n-type activity for ion doses >/=1x1015/cm2, a conductivity type conversion for intermediate doses and little effect upon p-type activity for ion doses p-n junction is envisioned.