AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

Abstract We report the electrical and optical characteristics of an AlGaN/AlGaN quantumwell ultraviolet (UV) light-emitting diode (LED) grown on sapphire by metalorganic chemical vapor deposition. The devices operating under room-temperature DC excitation exhibit a peak emission wavelength at 341 nm with a narrow line width of Δ λ =10 nm. We also report a ternary AlGaN UV LED grown on sapphire with peak wavelength emission at 302 nm. The device utilized a double heterostructure, along with a Mg-doped AlGaN/AlGaN superlattice structure as a p-cladding layer. The emission peak exhibits a narrow line width of Δ λ =10 nm.