InAs and InAsSb LEDs with built-in cavities

The emission of episide down bonded InAsSbP/In(Ga)As/n+-InAs and graded InAsSb(P) light-emitting diodes (LEDs) with ?max = 3.3?5.5 ?m has been modified with an 'internal' Fabry?Perot cavity or bandpass filter attached to the LED with an optical glue. Positive and negative emission with the full width at half-maximum close to that of the filter (8?20 meV) have been obtained in the 20?50 ?C temperature range.