Thermal analysis of III-V transistor at high frequencies

The thermal analysis of GaAs Schottky Barrier Nanowire MOSFET has been carried out. Electrons which flow in the device have been considered as the source of heat generation in the device. The study includes the location of the heat source and the temperature distribution of the device at different voltages. The variation of maximum temperature in the device has also been considered at different drain and gate voltages.