Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function metal (WFM), which reduces gate-contact capacitance, and improves AC performance and yields by increasing gate-contact space. Combination of work function (WF) adjust treatment and WFM optimization was applied to achieve wide range of threshold voltage (Vt) control for multiple Vt (multi-Vt) devices without any performance penalty.