Laser induced photodesorption of SiCl from Si(100) monitored by time of flight and time resolved reflectivity

The excimer laser induced desorption rate of SiCl molecules from a chlorinated silicon surface is measured in real time together with the transient change of the surface reflectivity at 632.8 nm. It is demonstrated that, under conditions where gas‐phase chlorine is not photoexcited and does not collide with the surface during the laser pulse, laser induced desorption occurs only when the surface melts, at the laser wavelengths 308 and 248 nm.