Optical switching properties of VOx thin films deposited on Si3N4 substrates using ion beam sputtering
2009
Vanadium dioxide (VO 2 ) thin films, for their property of metal-insulator transition (MIT), have drawn many
researchers' attention on optical devices study. Nowadays it is complicated to fabricate single-phase VO 2 ) thin films. Ion
beam sputtering is adopted to deposit VOx thin films (main component is VO 2 ) ) on Si 3 N 4 , while sputtering power,
substrate temperature and partial oxygen pressure of VOx are adjusted. Then annealing technology is utilized to improve
the parameter property of VO x thin films. The thin films are tested by AFM, XPS, XRD, Fourier transform infrared
spectrometry, tunable semiconductor laser and optical power meter. Both temperature-driven phasetransition and
photoexcitation phasetransition of VO x thin films are applied. The samples are heated from 20°C to 80°C, discovering
that the phasetransition temperature is about 59°C and the value of resistance before the phasetransition is two orders of
magnitude over the value of resistance after the phasetransition. At the wavelength of 1550 nm, the transmission is from
32% to 1%. Besides, the extinction ratio of the thin films sample is obtained. The optical properties show that the VO x
thin films have an apparent switching effect in the optical communication fields.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI