Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy

The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for direct-gap semiconductors at different measurands errors of electron beam energies characteristic of real experiment.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.