Use of voltage stressing at wafer probe for reliability predictions

In two independent evaluations, good correlation has been found between I DDQ degradation due to voltage stressing at wafer probe and the reliability of devices built from a given wafer or wafer lot. This provides a useful reliability predictor and screening tool at the wafer level. This technique also provides a useful vehicle for the manufacturing facility to better understand and modify those portions of their wafer fabrication process where reliability improvements are warranted. The usefulness of this method should be applicable to evolving integrated circuit (IC) manufacturing technologies that have reduced feature sizes and operating voltages, provided proper precautions are taken in the selection of voltage stress values.