Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.