MgBi 2 V 2 O 9 : preparation and electrical property evaluation

The bismuth layered structure oxide, MgBi2V2O9, was prepared using solid state reaction technique. Room temperature X-ray diffraction study confirms the formation of the material with a monoclinic crystal structure with lattice parameters 5.1950, 11.7010, and 5.0920 A respectively. Morphological analysis from the SEM images reveals the formation of spherical grains in the sample. Electrical properties of the respective sample were observed in a wide range of temperature (25–500 °C) and frequency (1 kHz–1 MHz). The material exhibits dielectric dispersion. Hysteresis loop at room temperature proves the existence of ferroelectric property in the material. The d33 value of the ceramic sample was obtained as 7 C/N from piezoelectric study.