Automotive power module technologies for high speed switching

IGBT module for EV(Electric Vehicle) and HEV(Hybrid Electric Vehicle) are required high power density. To increase power density of IGBT modules, downsizing of power module and reduction of power loss are necessary. We have developed RC-IGBT(Reverse Conducting IGBT) by using latest thin wafer technology to meet high power density of IGBT module. RC-IGBT which is IGBT and FWD fabricated on single die can significantly downsize IGBT module. Thin RC-IGBT technology can decrease steady-state loss and switching loss reduction is also important for power loss reduction in inverter operation. In this paper, the design of thin RC-IGBT technology and package structure for high speed switching are presented.