The dual advanced ion simultaneous implantation experiment (DAISIE) for testing plasma-facing materials

A new dual ion beam experimental facility, the Dual Advanced Ion Simultaneous Implantation Experiment (DAISIE), has been constructed at the University of Wisconsin-Madison Inertial Electrostatic Confinement laboratory for implanting candidate plasma-facing components of multiple ion species. DAISIE is capable of implanting ions at energies from 10 kV to 50 kV, ion currents of 10 µA–950 µA, corresponding to steady-state ion fluxes of 1 × 1014 cm−2 s−1 to 1 × 1016 cm−2 s−1, incidence angles of 55°, and surface temperatures of at least 1100 °C. Improvements to the sample current and sample temperature measurement and control systems over those used in prior UW-IEC experiments have been made. Optical measurements of the spot size of the beam on samples in DAISIE are in agreement with existing measurements of the ion beam and spot size in previous UW-IEC experiments. Dual-beam operation has been confirmed with helium-deuterium ion implantations in tungsten surfaces.A new dual ion beam experimental facility, the Dual Advanced Ion Simultaneous Implantation Experiment (DAISIE), has been constructed at the University of Wisconsin-Madison Inertial Electrostatic Confinement laboratory for implanting candidate plasma-facing components of multiple ion species. DAISIE is capable of implanting ions at energies from 10 kV to 50 kV, ion currents of 10 µA–950 µA, corresponding to steady-state ion fluxes of 1 × 1014 cm−2 s−1 to 1 × 1016 cm−2 s−1, incidence angles of 55°, and surface temperatures of at least 1100 °C. Improvements to the sample current and sample temperature measurement and control systems over those used in prior UW-IEC experiments have been made. Optical measurements of the spot size of the beam on samples in DAISIE are in agreement with existing measurements of the ion beam and spot size in previous UW-IEC experiments. Dual-beam operation has been confirmed with helium-deuterium ion implantations in tungsten surfaces.