On the choice of initial approximation in the problem of parameter identification of direct-gap semiconductors by cathodoluminescence microscopy

The problem of the choice of initial approximation has been considered to identify the parameters of direct-gap semiconductors by cathodoluminescence microscopy using the dependence of monochromatic cathodoluminescence intensity on electron beam energy for the case of a low level of signal excitation. It has been shown that the realization of the confluent analysis method can lead to the problem of multidimensional numerical minimization of a quadratic functional, the solution of which depends significantly on the choice of initial approximation. On this basis, some conditions of correct processing of the experimental data have been determined to identify the required parameters for gallium arsenide.