Evidence of charge storage in a-Si:H p-i-n diode and lifetime of carriers

Evidence of charge storage in a 5 μ m thick p-i-n diode of a-Si:H under pulsed high level double injection conditions was observed in a reverse-recovery experiment. Two requirements, a high injection level and a long injection time, need to be satisfied for the presence of charge storage. Under certain conditions, the recovery charge increases with increasing forward pulse and injection time and it decreases with increasing delay time of the reverse pulse bias. A carrier lifetime of about 2 μ s was observed.