Resistive switching effect of YBa2Cu3O7–x/Nb:SrTiO3 heterostructure

Abstract In this study, YBa 2 Cu 3 O 7―x /Nb:SrTiO 3 (YBCO/Nb:STO) planar heterostructure was prepared on Nb:SrTiO 3 (Nb:STO) substrate by sol-gel method. The I–V curves revealed that the structure exhibited excellent resistive switching (RS) effect. Current transmission characteristics of the heterostructure prepared using different electrodes and Nb:STO were analyzed. Results indicated that the RS effect was caused by the capture and escape of the electrons from the charge trap at the interface between electrode and Nb:STO. Schottky barrier was a prerequisite for the RS effect. Further investigation of the current transport properties of the YBCO/Nb:STO heterostructure at low temperature revealed that the current transport was affected by its own carriers and charge traps when the heterostructure was under low-resistance state, and the current decreased with decreasing temperature. Owing to the decrease in barrier height, the current increased with decreasing temperature under high-resistance state, with current transport properties exhibiting Schottky emission characteristics.