The impact of radiation on volt-ampere characteristics of SiGe transistors

The article presents the comparison of the effects of the fast electrons with the energy of 6 MeV and 60 Co gamma rays on the volt-ampere characteristics (VACs) of SiGe n-p-n transistors of SGB25V technology (the major ones for design of the analog ICs): the dependence of the static base current gain in the common-emitter (CE) configuration (β) on the emitter current (Ie), the output VAC in the CE configuration, the dependence of the voltage across the forward-biased base-emitter junction (Ube) on Ie.