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Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge
Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge
2008
M.A. Negara
K. Cherkaoui
Chadwin D. Young
Prashant Majhi
W. Tsai
D. Bauza
G. Ghibaudo
P.K. Hurley
Keywords:
Oxide
Electron mobility
Time-dependent gate oxide breakdown
Tin
Inorganic chemistry
Materials science
Optoelectronics
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