Waveguide materials by oxygen ion implantation into GaAs

Ion implantation has some desirable features for changing material properties such as : reproducibility, uniformity, speed of the doping process, a well controlled dose rate and dopant profile, less stringent requirements on dopant source purity, the simplicity of masked implantation, and the avoidance of high temperatures. Waveguides and waveguide lasers have been fabricated by ion implantation into dielectric materials. >