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A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET
A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET
2015
Takanori Matsuzaki
Tatsuya Onuki
Shuhei Nagatsuka
H. Inoue
Takahiko Ishizu
Yoshinori Ieda
Naoto Yamade
Hidekazu Miyairi
Masayuki Sakakura
Yutaka Shionoiri
K. Kato
T. Okuda
J. Koyama
Y Yamamoto
S Yamazaki
Keywords:
Oxide
Crystallography
Crystal
Materials science
Cell memory
Correction
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